I used to be looking through the net but could not uncover any information demonstrate how lower threshold voltage is fast but eat extra electric power and how high threshold voltage is sluggish but consumes small electric power.
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You may modify the described parameters, and compare it by using a "good" outcome which will take two hours siumlation time. Dependant upon your conditions, you'll be able to accelerate the simulation time.
So can anyone please describe how FET with very low threshold voltage has higher velocity and higher leakage recent when FET with superior threshold might be sluggish but low on power?
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Meaning I must simulate the circuit many times to obtain the final results but The difficulty is that every simulation requires about two hrs and just makes the function really sluggish.
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i had same trouble with PICs , cek tat the sample data files run in usual speed, i cudnt take care of the situation entirely, try popular_songs taking away the crystal and Placing mcu speed at 1Mhz in its Attributes
* You have lots of wires intending to ground through other wires. The simulator is applying cpu cycles needlessly to compute present in Those people joined wires (regardless that their volt stage is zero). Give Every of People wires its own ground.
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The challenge is for my investigate I need to do such things as sweep voltage, frequency, load resistance etc. to analyse their effect on the output
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